2021 Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 본문 Author 김곤호 Journal Materials Vol./ Page Volume 14, Issue 11 Year 2021 DOI professor 수정 삭제 목록 이전글Safety evaluation of atmospheric pressure plasma jets in in vitro and in vivo experiments 22.04.22 다음글First-Principles Calculations of the Diffusivity of Interstitial Helium in Alpha-U Considering Anisotropy, Isotope Effects, and Quantum Effects 22.04.22