2021 Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma 본문 Author 권지원,박지훈, 이하늘 Journal Materials Vol./ Page Volume 14, Issue 11 Year 2021 DOI student 수정 삭제 목록 이전글Multi-scaled Monte Carlo calculation for radon-induced cellular damage in the bronchial airway epithilium 22.04.22 다음글Direct electrochemical lithium recovery from acidic lithium-ion battery leachate using intercalation electrodes 22.04.22